IXGK320N60A3 Datasheet, PDF (1/5 Pages) IXYS Corporation – GenX3TM 600V IGBTs

GenX3^TM 600V IGBTs
Ultra-Low Vsat PT IGBTs for
up to 5kHz Switching
IXGK320N60A3
IXGX320N60A3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_LRMS
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
600
V
600
V
±20
V
Transient
±30
V
T_C = 25°C (Chip Capability)
T_C = 110°C
Terminal Current Limit
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
320
A
210
A
160
A
700
A
I_CM = 320
A
@ 0.8 • V_CES
1000
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 1mA, V_GE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
I_C = 320A
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
150 μA
1.5 mA
±400 nA
1.05 1.25 V
1.46
V
V_CES =
I_C25 =
V_CE(sat) ≤
600V
320A
1.25V
TO-264 (IXGK)
G
C
EE
Tab
PLUS247^TM (IXGX)
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{High Avalanche Capability}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2008 IXYS CORPORATION, All rights reserved
DS99583B(12/09)