IXGH90N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

Preliminary Technical Information
GenX3^TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGH90N60B3
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 90A
≤£ 1.8V
= 148ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by leads)
T_C = 110°C (Chip capability)
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 2Ω
Clamped inductive load @ V_CE ≤ 600V
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
90
A
500
A
I_CM = 180
A
660
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
V_GE(th)
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 90A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
75 μA
750 μA
±100 nA
1.55
1.62
1.80 V
V
TO-247 AD (IXGH)
G
C
E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for low conduction and}
switching losses
z _{Square RBSOA}
z _{International standard package}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2008 IXYS CORPORATION, All rights reserved
DS99994(05/08)