IXGH72N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 B3-Class IGBTs

GenX3^TM B3-Class
IGBTs
Medium Speed low Vsat PT
IGBTs 5-40 kHz Switching
IXGH72N60B3
IXGT72N60B3
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 72A
≤£ 1.80V
= 90ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
Mounting Torque (TO-247)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-247
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
72
A
400
A
20
A
200
mJ
I_CM = 240
A
@ V_CE ≤ 600
V
540
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
5
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
75 μA
750 μA
±100 nA
1.51 1.80 V
1.48
V
TO-247 AD (IXGH)
G
C
E
TO-268 (IXGT)
(TAB)
GE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{Avalanche Rated}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99847A(02/09)