IXGH56N60A3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

Advance Technical Information
GenX3^TM 600V IGBT
IXGH56N60A3
V_CES =
I_C110 =
V_CE(sat) ≤
600V
56A
1.35V
Ultra-Low Vsat PT IGBT for up to
5 kHz Switching
Symbol Test Conditions
V_CES
V_CGR
V_GES
V_GEM
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_C = 25°C (Chip Capability)
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped Inductive Load
P_d
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting torque
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
150
56
370
I_CM = 150
V_CE ≤ 0.8 • V_CES
330
- 55 ... +150
150
- 40 ... +150
300
260
1.13/10
6
A
A
A
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_CE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 44A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
50 μA
500 μA
±100 nA
1.22
1.22
1.35 V
V
TO-247
GG
CDES
(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100174(08/09)