IXGH50N90B2D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – HiPerFAST IGBT with Fast Diode

HiPerFAST^TM
IGBT with Fast
Diode
IXGH 50N90B2D1
IXGK 50N90B2D1
IXGX 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
Preliminary Data Sheet
V_CES
I_C25
V_CE(sat)
t_{fi typ}
= 900 V
= 75 A
= 2.7 V
= 200 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ ≤ 600V
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
F_C
Weight
Mounting torque (TO-247, TO-264)
Mounting force (PLUS247)
Maximum Ratings
900
V
900
V
± 20
V
± 30
V
75
A
50
A
200
A
I_CM = 100
A
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10Nm/lb.in.
20..120 / 4.5..25 N/lb
TO-247
6
g
TO-264
10
g
PLUS247
6
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
V_GE(th)
I_C = 250 μA, V_CE = V_GE
I_CES
I_GES
V_CE(sat)
V_CE = V_CES
V_GE = 0 V
T_J = 150°C
V_CE = 0 V, V_GE = ± 20 V
I_C = I_C110, V_GE = 15 V, Note 1
T_J = 125°C
Characteristic Values
min. typ. max.
3.0
5.0 V
50 μA
1 mA
± 100 nA
2.2 2.7 V
V
TO-247 (IXGH)
G
CE
PLUS247 (IXGX)
G
CE
TO-264 (IXGK)
C (TAB)
C (TAB)
G
D
S
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
© 2006 IXYS All rights reserved
DS99393(01/06)