IXGH50N60B2 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFASTTM IGBT B2-Class High Speed IGBTs

HiPerFAST^TM IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
V_CES
I_C25
V_CE(sat)
t_{fi typ}
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ ≤ 600V
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (TO-247)
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 80
A
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 40 A, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
3.0
5.0 V
T_J = 25°C
T_J = 150°C
T_J = 125°C
50 µA
1 mA
±100 nA
1.6 2.0 V
1.5
V
TO-247
(IXGH)
TO-268
(IXGT)
G
CE
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z _{High frequency IGBT}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{PFC circuits}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS99145A(03/04)