IXGH50N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
IXGH 50N60B
IXGK 50N60B
IXGT 50N60B
IXGJ 50N60B
V = 600 V
CES
I_C25 = 75 A
V = 2.3 V
CE(sat)
t_fi(typ) = 120 ns
TO-247 AD (IXGH)
Symbol
Test Conditions
Maximum Ratings
CE
C (TAB)
V_CES
V
CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load
T_C = 25°C
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 100
A
@ 0.8 V_CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
M
Mounting torque
d
TO-247AD
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight
TO-247
TO-264
TO-268
6
g
10
g
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
600
V
2.5
T_J = 25°C
T_J = 125°C
5.0 V
200 µA
1 mA
±100 nA
2.3 V
TO-268 (D3) ( IXGT)
G
E
TO-268 Leaded (IXGJ)
G
C
E
TO-264 AA (IXGK)
C (TAB)
(TAB)
G
C
E
C (TAB)
G = Gate
E = Emitter
D = Drain
TAB = Collector
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOS^TM process
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(insulated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
© 2002 IXYS All rights reserved
95585F(12/02)