IXGH50N120C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V IGBT

Preliminary Technical Information
GenX3^TM 1200V IGBT
IXGH50N120C3
High speed PT IGBTs
for 20 - 50 kHz switching
V_CES =
I_C110 =
V_CE(sat) ≤
t_fi(typ) =
1200V
50A
4.2V
64ns
Symbol
V_CES
V_CGR
V
GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T
stg
M_d
T_L
T
SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 3Ω
Clamped inductive load @V_CE≤ 1200V
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
50
A
250
A
40
A
750
mJ
I_CM = 100
A
460
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
V_GE(th)
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I
GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 40A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
100 μA
2 mA
±100 nA
4.2 V
2.6
V
TO-247 (IXGH)
G
CE
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{International standard packages:}
JEDEC TO-247AD
z _{IGBT and anti-parallel FRED in one}
package
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switch-mode and resonant-mode}
power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS99996(06/08)