IXGH48N60C3C1 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

Preliminary Technical Information
GenX3^TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBT for
40 - 100kHz Switching
IXGH48N60C3C1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 48A
≤ 2.5V
= 38ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
48
A
20
A
250
A
30
A
300
mJ
I_CM = 100
A
@ < V_CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
1.13/10
6
°C
°C
Nm/lb.in
g
Characteristic Values
Min.
Typ. Max.
3.0
5.5 V
50 μA
1.75 mA
±100 nA
2.3
2.5 V
1.8
V
TO-247
GC
E
G = Gate
E = Emitter
( TAB )
C = Collector
TAB = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Anti-Parallel Schottky Diode}
z _{Fast Switching}
z _{Avalanche Rated}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100139A(06/09)