IXGH48N60A3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

GenX3^TM 600V IGBT
with Diode
Ultra Low Vsat PT IGBT for
up to 5kHz switching
IXGH48N60A3D1
V_CES =
I_C110 =
V_CE(sat) ≤
600V
48A
1.35V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load @ ≤ 600V
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 32A, V_GE = 15V, Note 1
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
48
A
300
A
I_CM = 96
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
300 μA
1.75 mA
±100 nA
1.18 1.35 V
TO-247 (IXGH)
G
C
E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for low conduction losses}
z _{Square RBSOA}
z _{Anti-parallel ultra fast diode}
z _{International standard package}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2008 IXYS CORPORATION, All rights reserved
DS99926A(07/08)