IXGH40N60C2D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – HiPerFASTTM IGBTs w/ Diode

HiPerFAST^TM IGBTs
w/ Diode
C2-Class High Speed IGBTs
IXGT40N60C2D1
IXGJ40N60C2D1
IXGH40N60C2D1
V_CES =
I_C110 =
≤ V_CE(SAT)
= t_fi(typ)
600V
40A
2.7V
32ns
TO-268 (IXGT)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C ( Limited by Lead)
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_J = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
40
A
200
A
I_CM = 80
V_CE ≤ V_CES
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
200 μA
3 mA
±100 nA
2.2 2.7 V
1.7
V
© 2010 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-268 (IXGJ)
G
C
E
TO-247 (IXGH)
C (Tab)
G
CE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Very High Frequency IGBT}
z _{Square RBSOA}
z _{High Current Handling Capability}
Applications
z _{Uninterruptible Power Supplies (UPS)}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{AC Motor Speed Control}
z _{DC Servo and Robot Drives}
z _{DC Choppers}
Advantages
z _{High Power Density}
z _{Very Fast Switching Speeds for High}
Frequency Applications
z _{High Power Surface Mountable}
Packages
DS99041F(11/10)