IXGH40N60B Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
Preliminary data sheet
IXGH 40N60B
IXGT 40N60B
V_CES
I_C25
V
CE(sat)
t_fi
= 600 V
= 75 A
= 2.1 V
= 180 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 W
Clamped inductive load, L = 100 mH
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (M3)
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
40
A
150
A
I_CM = 80
A
@ 0.8 V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10Nm/lb.in.
TO-247 AD
6
g
TO-247 SMD 4
g
Symbol
BV_CES
V_GE(th)
I _CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 mA, V_GE = 0 V
BV_CES temperature coefficient
I_C = 250 mA, V_CE = V_GE
V_GE(th) temperature coefficient
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 150°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C110, V_GE = 15 V
600
0.072
2.5
-0.286
V
%/K
5V
%/K
200 mA
1 mA
±100 nA
1.6 2.1 V
TO-247 AD
(IXGH)
G
CE
TO-268 (D3)
(IXGT)
G
E
C (TAB)
(TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l _{International standard packages}
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
l _{High current handling capability}
l _{Latest generation HDMOS}TM _process
l _{MOS Gate turn-on}
- drive simplicity
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switched-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{High power density}
l _{Suitable for surface mounting}
l _{Switching speed for high frequency}
applications
l _{Easy to mount with 1 screw,TO-247}
(isolated mounting screw hole)
© 2001 IXYS All rights reserved
98799 (01/01)