IXGH40N120C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 C3-Class IGBT w/Diode

Preliminary Technical Information
GenX3^TM C3-Class
IGBT w/Diode
High Speed PT IGBT
for 20 - 50 kHz Switching
IXGH40N120C3D1
V_CES =
I_C110 =
V_CE(sat) ≤
t_fi(typ) =
1200V
40A
4.4V
57ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 3Ω
Clamped inductive load
T_C = 25°C
Mounting Torque
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
40
A
25
A
180
A
30
A
500
mJ
I_CM = 80
A
@V_CE <1200
V
380
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13 / 10 Nm/lb.in.
300
°C
260
°C
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
100 μA
3 mA
±100 nA
4.4 V
2.7
V
TO-247
G
CE
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{Square RBSOA}
z _{Avalanche Rated}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
• Switch-Mode and Resonant-Mode
Power Supplies
• Uninterruptible Power Supplies (UPS)
• DC Choppers
• AC Motor Drives
• DC Servo and Robot Drives
© 2009 IXYS CORPORATION, All Rights Reserved
DS100115(02/09)