IXGH40N120B2D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – High Voltage IGBTs w/Diode

High Voltage IGBTs
w/Diode
IXGH40N120B2D1
IXGT40N120B2D1
V_CES = 1200V
I_C110 = 40A
V_CE(sat) ≤ 3.5V
t_fi(typ) = 140ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Lead)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
V
1200
V
± 20
V
± 30
V
75
A
40
A
25
A
200
A
I_CM = 80
@ 0.8 ≤ V_CES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
6
g
4
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ± 20V
I_C = 40A, V_GE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
T_J = 125°C
100 μA
3 mA
±100 nA
2.9 3.5 V
TO-247 (IXGH)
G
C
E
C (TAB)
TO-268 (IXGT)
GE
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
z _{International Standard Packages}
z _{IGBT and Anti-Parallel FRED for}
Resonant Power Supplies
- Induction Heating
- Rice Cookers
z _{Square RBSOA}
z _{Fast Recovery Expitaxial Diode}
(FRED)
- Soft Recovery with Low I_RM
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
© 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)