IXGH40N120A2 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT Low V

High Voltage IGBT ^{IXGH 40N120A2}
Low V_CE(sat)
IXGT 40N120A2
Preliminary Data Sheet
IXGH 40N120A2
IXGT 40N120A2
V_CES = 1200 V
I_C25 = 75 A
V_CE(sat) ≤ 2.0 V
Symbol Test Conditions
Maximum Ratings
V_CES
V_CES
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C
Continuous
Transient
T_C = 25°C, IGBT chip capability
T_C = 110°C
T_J ≤ 150°C, tp < 300 μs
V_GE = 15 V, T_VJ = 150°C, R_G = 5 Ω
Clamped inductive load, V_CE < 960 V
T_C = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
Mounting torque (ixgh)
(IXGH)
(IXGT)
1200
V
1200
V
± 20
V
± 30
V
75
A
40
A
160
A
I_CM = 80
A
360
W
-55 ... +150 °C
150
°C
-55 ... +150 °C
300
°C
260
°C
1.3/10 Nm/lb.in.
6.0
g
4.0
g
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_GE(th)
V_GE(th)
I_C = 1 mA, V_GE = 0 V
I_C = 250 μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0 V
I_GES
V_CE = 0 V, V_GE = ±20 V
V_CE(sat) I_C = I_C110, V_GE = 15V
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
T_J = 125°C
50 μA
1mA
± 100 nA
2.0 V
TO-247 (IXFH)
G
CE
(TAB)
TO-268 (IXGT)
G = Gate
E = Emitter
G
E
C = Collector
TAb = Collector
C (TAB)
Features
• International standard packages
• Low V_CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
• Capacitor discharge
© 2005 IXYS All rights reserved
DS99509 (12/05)