IXGH39N60B Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
V
CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 76 A
= 1.7 V
= 200 ns
Preliminary data
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 22 Ω
Clamped inductive load
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (M3) TO-247
(D1)
Maximum Ratings
600
V
600
V
±20
V
±30
V
76
A
39
A
152
A
I_CM = 76
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Symbol
Test Conditions
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 250 µA, V_GE = 0 V
I_C = 750 µA
I_C = 250 µA, V_CE = V_GE
I_C = 500 µA
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 125°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I₉₀, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
39N60B
600
V
39N60BD1 600
39N60B
2.5
39N60BD1 2.5
5.0 V
5.0 V
39N60B
39N60B
39N60BD1
200 µA
1 mA
3 mA
±100 nA
1.7 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
z _{International standard packages}
JEDEC TO-247 AD & TO-268
z _{High current handling capability}
z _{Newest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{PFC circuits}
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
Advantages
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2003 IXYS All rights reserved
DS97548A(02/03)