IXGH38N60U1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Ultra-Low VCE(sat) IGBT with Diode

Ultra-Low V_CE(sat)
IGBT with Diode
Combi Pack
IXGH 38N60U1
V_CES
I
C25
V_CE(sat)
= 600 V
= 76 A
= 1.8 V
Symbol
Test Conditions
V_CES
V
CGR
V_GES
V
GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load, L = 100 µH
P
C
T_J
T_JM
T
stg
M_d
Weight
T
C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
76
A
38
A
152
A
I_CM = 76
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l _{International standard package}
JEDEC TO-247 AD
l _{IGBT and anti-parallel FRED in one}
package
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for minimum on-state conduction
losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
750
µA,
V
GE
=
0
V
600
I_C = 250 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V =0V
GE
T_J = 25°C
T
J
=
125°C
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
C90 GE
V
5.5 V
500 µA
8 mA
±100 nA
1.8 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Reduces assembly time and cost}
l _{High power density}
© 1996 IXYS All rights reserved
94528B (3/96)