IXGH36N60B3C1 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

Preliminary Technical Information
GenX3^TM 600V IGBT
w/ SiC Anti-Parallel
Diode
Medium Speed Low Vsat PT
IGBT for 5 - 40kHz Switching
IXGH36N60B3C1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
TO-247
= 600V
= 36A
≤ 1.8V
= 100ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 5Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10 seconds
Plastic Body for 10 seconds
Mounting Torque
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
75
A
36
A
20
A
200
A
I_CM = 80
A
@ ≤ V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J =125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
3.0
5.0 V
35 μA
1.25 mA
±100 nA
1.5
1.8 V
G
CE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{Anti-Parallel Schottky Diode}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100141A(06/09)