IXGH32N90B2D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – HiPerFAST IGBT with Fast Diode

Advance Technical Information
HiPerFAST^TM IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
IXGH 32N90B2D1
IXGT 32N90B2D1
V_CES
I_C25
V_CE(sat)
t_{fi typ}
= 900 V
= 64 A
= 2.7 V
= 150 ns
Symbol
Test Conditions
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
V_GES
V_GEM
Continuous
Transient
I_C25
T_C = 25°C
I_C110
T_C = 110°C
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
V_GE= 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load: V_CL < 600V
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (TO-247)
Maximum Ratings
900
V
900
V
±20
V
±30
V
64
A
32
A
200
A
I_CM = 64
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
TO-247
TO-268
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 mA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ± 20 V
I_C = I_C110, V_GE = 15 V
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
3.0
5.0 V
T_J = 150°C
T_J = 125°C
300 μA
1.5 mA
± 100 nA
2.2 2.7 V
2.1
V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
G
E
C (TAB)
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• High frequency IGBT
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)