IXGH32N60CD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

HiPerFAST^TM IGBT
with Diode
Light Speed Series
IXGH 32N60CD1
IXGT 32N60CD1
V
CES
I_C25
V_CE(SAT)typ
t_fi(typ)
= 600 V
= 60 A
= 2.1 V
= 55 ns
Symbol
Test Conditions
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
V_GES
V_GEM
Continuous
Transient
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ 0.8 V_CES
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque, TO-247 AD
TO-247 AD
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
32
A
120
A
I_CM = 64
A
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10
6
5
Nm/lb.in.
g
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 25°C
T_J = 125°C
600
V
2.5
5.0 V
200 µA
3 mA
±100 nA
2.1 2.5 V
TO-247 AD (IXGH)
G
C
E
TO-268 (D3) ( IXGT)
C (TAB)
G
E
C (TAB)
G = Gate
E = Emitter
C = Collector
Features
z _{International standard TO-247AD}
package
z _{High current handling capability}
z _{Latest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
z _{High power surface mountable package}
© 2002 IXYS All rights reserved
97544E (6/02)