IXGH32N60BU1 Datasheet, PDF (1/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

HiPerFAST^TM IGBT
with Diode
IXGH 32N60BU1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 60 A
= 2.3 V
= 80 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque, TO-247 AD
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
32
A
120
A
I_CM = 64
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 750µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 125°C
V
5.0 V
500 µA
8 mA
±100 nA
2.3 V
TO-247 AD
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
z _{International standard packages}
JEDEC TO-247 SMD
z _{High frequency IGBT and antiparallel}
FRED in one package
z _{High current handling capability}
z _{Newest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
Advantages
z _{Space savings (two devices in one}
package)
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2003 IXYS All rights reserved
DS95567C(02/03)