IXGH32N50BU1 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT with Diode Combi Pack

Preliminary Data Sheet
HiPerFAST^TM IGBT
with Diode
Combi Pack
IXGH32N50BU1 V_CES = 500 V
IXGH32N50BU1S I_C25
= 60 A
V
= 2.0 V
CE(sat)
t_fi
= 80 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V
CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T_J
T_JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
500
500
±20
±30
60
32
120
I_CM = 64
@ 0.8 V_CES
200
-55 ... +150
150
-55 ... +150
300
M_d
Weight
Mounting torque, TO-247 AD
TO-247 SMD
TO-247 AD
1.13/10
4
6
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 750µA, V_GE = 0 V
500
I_C = 250 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
V
5.5 V
500 µA
8 mA
±100 nA
2.0 V
TO-247 SMD
(32N50BU1S)
G
E
C (TAB)
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l _{International standard packages}
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l _{High frequency IGBT and antiparallel}
FRED in one package
l _{High current handling capability}
l _{Newest generation HDMOS}TM _process
l _{MOS Gate turn-on}
- drive simplicity
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switched-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{High power density}
l _{Very fast switching speeds for high}
frequency applications
© 1997 IXYS All rights reserved
95565A (4/97)