IXGH32N50B Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

Preliminary Data Sheet
HiPerFAST^TM IGBT
IXGH32N50B _VCES = 500 V
IXGH32N50BS _IC25
= 60 A
V_CE(sat) = 2.0 V
t
= 80 ns
fi
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I
C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T
J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (M3)
Maximum Ratings
500
V
500
V
±20
V
±30
V
60
A
32
A
120
A
I_CM = 64
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-247 AD 6
g
TO-247 SMD 4
g
TO-247 SMD
(32N50BS)
G
E
C (TAB)
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l _{International standard packages}
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l _{High current handling capability}
l _{Newest generation HDMOS}TM _process
l _{MOS Gate turn-on}
- drive simplicity
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
2.5
T_J = 25°C
T_J = 125°C
V
5V
200 µA
1 mA
±100 nA
2.0 V
Applications
l _{PFC circuits}
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switched-mode and resonant-mode}
power supplies
Advantages
l _{High power density}
l _{Very fast switching speeds for high}
frequency applications
© 1997 IXYS All rights reserved
95564A (4/97)