IXGH32N170A Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT

High Voltage
IGBT
IXGH 32N170A
IXGT 32N170A
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 1700 V
= 32 A
= 5.0 V
= 50 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1700
V
1700
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
32
A
21
A
110
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load
I_CM = 70
A
@ 0.8 V_CES
t_SC
T_J = 125°C, V_CE = 1200 V; V_GE = 15 V, R_G = 10Ω
10
µs
P_C
T_C = 25°C
T_J
T_JM
T_stg
350
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
M_d
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300
°C
6
g
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
1700
3.0
V
5.0 V
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
Note 1 T_J = 125°C
50 µA
2 mA
V_CE = 0 V, V_GE = ±20 V
±100 nA
I_C = I_C90, V_GE = 15 V
T_J = 25°C
T_J = 125°C
4.0 5.0 V
4.8
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Features
z _{International standard packages}
JEDEC TO-268 and
JEDEC TO-247 AD
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Rugged NPT structure}
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
z _{Capacitor discharge & pulser circuits}
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
Advantages
z _{High power density}
z _{Suitable for surface mounting}
z _{Easy to mount with 1 screw,}
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98942D(09/04)