IXGH32N120A3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V

GenX3^TM 1200V
IGBTs
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
IXGH32N120A3
IXGT32N120A3
V_CES =
I_C110 =
V_CE(sat) ≤
1200V
32A
2.35V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 20Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
32
A
230
A
20
A
120
mJ
I_CM = 150
A
V_CE ≤ 0.8 • V_CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
4.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 1
I_C = 400A, V_GE = 30V, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
50 μA
1 mA
±100 nA
2.35 V
11
V
TO-268 (IXGT)
G
E
C (Tab)
TO-247 (IXGH)
G
CE
C (Tab)
G = Gate
C = Collector
E = Emitter Tab = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _{Capacitor Discharge}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2011 IXYS CORPORATION, All rights Reserved
DS99608C(03/11)