 English |
|
|
|
|
|
|
|
| IXGH32N100A3 Datasheet, PDF (1/2 Pages) IXYS Corporation – GenX3 1000V IGBT | |||
| |||
|
Advance Technical Information
GenX3TM 1000V IGBT
Ultra-low Vsat PT IGBTs
for up to 4 kHz switching
IXGH32N100A3
IXGT32N100A3
VCES = 1000V
IC25 = 75A
VCE(sat) ⤠2.2V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IAS
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C, IGBT chip capability
TC = 110°C
TJ ⤠150°C, tp < 300μs
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped inductive load @ ⤠0.8 ⢠VCES
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 )
TO-247
TO-268
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
75
A
32
A
200
A
20
A
120
mJ
ICM = 150
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.0 V
50 μA
1 mA
±100 nA
1.90 2.2 V
2.05
V
TO-247 (IXGH)
G
C
E
TO-268 ( IXGT)
G
E
C (TAB)
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
⢠International standard packages
⢠Low saturation voltage
⢠Avalanche Rated
⢠MOS gate turn-on
- drive simplicity
⢠Epoxy molding meets UL 94V-O
Applications
⢠Pulser circuits
⢠Capacitor discharge
© 2008 IXYS CORPORATION, All rights reserved
DS99958(02/08)
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese