IXGH31N60U1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Ultra-Low VCE(sat) IGBT with Diode

Ultra-Low V_CE(sat)
IGBT with Diode
Combi Pack
IXGH 31N60U1
V_CES
I_C25
V
CE(sat)
= 600 V
= 40 A
= 1.8 V
Symbol
Test Conditions
V_CES
V_CGR
V
GES
V_GEM
I
C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
10
Ω
Clamped inductive load, L = 100 µH
P_C
T
J
T_JM
T_stg
M
d
Weight
T_C = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
40
A
31
A
80
A
I = 62
A
CM
@ 0.8 V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l _{International standard package}
JEDEC TO-247 AD
l _{IGBT and anti-parallel FRED in one}
package
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for minimum on-state conduction
losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 750 µA, V_GE = 0 V
600
I_C = 250 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
V
5.5 V
500 µA
8 mA
±100 nA
1.8 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Reduces assembly time and cost}
l _{High power density}
© 1996 IXYS All rights reserved
92798D (3/96)