IXGH30N60C2D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

HiPerFAST^TM IGBT
with Diode
C2-Class High Speed IGBTs
IXGH 30N60C2D1
IXGT 30N60C2D1
V_CES
I
C25
V_CE(sat)
t_{fi typ}
= 600 V
= 70 A
= 2.7 V
= 32 ns
Symbol
Test Conditions
V
CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
V_GES
V_GEM
Continuous
Transient
I_C25
T_C = 25°C (limited by leads)
I
C110
T_C = 110°C
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
P
C
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ ≤ 600 V
T
C
= 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
M_d
Weight
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
70
A
30
A
150
A
I_CM = 60
A
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
250
°C
1.13/10Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 24 A, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
2.5
5.0 V
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
200 µA
3 mA
±100 nA
2.7 V
1.8
V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
z _{Very high frequency IGBT}
z _{Square RBSOA}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{PFC circuits}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{High power density}
z _{Very fast switching speed for high}
frequency aaplications
z _{High power surface mountable}
package
© 2005 IXYS All rights reserved
DS99169A(01/05)