IXGH30N60BU1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

HiPerFAST^TM IGBT
with Diode
Combi Pack
IXGH 30N60BU1
IXGT 30N60BU1
V_CES = 600 V
I_C25
= 60 A
V_CE(sat) = 1.8 V
t_fi
= 100 ns
TO-268
(IXGT)
Symbol
Test Conditions
Maximum Ratings
V_CES
V
CGR
V_GES
V_GEM
I
C25
I_C110
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T
C
= 25°C
T_C = 110°C
T
C
= 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T_J
T_JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque, TO-247 AD
TO-268
TO-247 AD
600
600
±20
±30
60
30
120
I_CM = 60
@ 0.8 V_CES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
4
6
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
G
E
TO-247 AD
C (TAB)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
Ÿ International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
Ÿ High frequency IGBT and antiparallel
FRED in one package
Ÿ High current handling capability
Ÿ Newest generation HDMOS^TM
process
Ÿ MOS Gate turn-on
- drive simplicity
Symbol
BV_CES
V
GE(th)
I_CES
I
GES
V_CE(sat)
V_CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I_C = 750µA, V_GE = 0 V
BV_CES temperature coefficient
I
C
=
250
µA,
V
CE
=
V
GE
V_GE(th) temperature coefficient
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 150°C
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C110, V_GE = 15 V
I_C = I_C110, V_GE = 15 V
T_J = 150°C
600
V
0.072
%/K
2.5
5.5 V
-0.286
%/K
500 µA
3 mA
±100 nA
1.8 V
2.0 V
Applications
Ÿ AC motor speed control
Ÿ DC servo and robot drives
Ÿ DC choppers
Ÿ Uninterruptible power supplies (UPS)
Ÿ Switched-mode and resonant-mode
power supplies
Advantages
Ÿ Space savings (two devices in one
package)
Ÿ High power density
Ÿ Optimized V_CE(sat) and switching
speeds for medium frequency
applications
© 2002 IXYS All rights reserved
97501E (02/02)