IXGH30N60B4 Datasheet, PDF (1/2 Pages) IXYS Corporation – High-Gain IGBT

Preliminary Technical Information
High-Gain IGBT
IXGH30N60B4
Medium-Speed PT Trench IGBT
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
600V
30A
1.7V
88ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
66
A
30
A
156
A
I_CM = 48
≤ @ V_CES
190
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified
BV_CES
I_C = 250μA, V_GE= 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 24A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
4.0
6.5 V
10 μA
500 μA
±100 nA
1.5
1.7 V
1.5
V
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
• Switch-Mode and Resonant-Mode
Power Supplies
• Uninterruptible Power Supplies (UPS)
• DC Choppers
• AC Motor Speed Drives
• DC Servo and Robot Drives
z _{PFC Circuits}
© 2011 IXYS CORPORATION, All Rights Reserved
DS100245A(04/11)