IXGH30N120C3H1 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V IGBT

Preliminary Technical Information
GenX3^TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for
10-50kHz Switching
V_CES
I_C100
V_CE(sat)
t_fi(typ)
= 1200V
= 24A
≤ 4.2V
= 42ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C100
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 100°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 5Ω
Clamped Inductive Load
T_C = 25°C
Mounting Torque
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
48
A
24
A
115
A
20
A
250
mJ
I_CM = 60
A
@V_CE ≤ 1200
V
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
260
°C
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES V_GE= 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 24A, V_GE = 15V, Note 2
T_J = 125°C
Characteristic Values
Min.
Typ. Max.
1200
V
3.0
5.0 V
100 μA
1.5 mA
±100 nA
3.6 4.2 V
3.2
V
TO-247AD
G
C
E
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{Avalanche Rated}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{AC Motor Speed Control}
z _{DC Servo and Robot Drives}
z _{DC Choppers}
z _{Uninterruptible Power Supplies (UPS)}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
© 2009 IXYS CORPORATION, All rights reserved
DS100123(03/09)