IXGH30B60BD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFASTTM IGBT with Diode

HiPerFAST^TM IGBT
with Diode
IXGH 30N60BD1 _{VCES = 600 V}
IXGT 30N60BD1 _{IC25 = 60 A}
= V_CE(sat) 1.8 V
t_fi(typ) = 100 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
V_CGR
V_GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T
C
= 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 W
Clamped inductive load, L = 100 mH
P_C
T_C = 25°C
T
J
T_JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque, TO-247 AD
TO-247 AD
TO-268
600
600
±20
±30
60
30
120
I_CM = 60
@ 0.8 V_CES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
• Moderate frequency IGBT and
antiparallel FRED in one package
• High current handling capability
• Newest generation HDMOS^TM
process
• MOS Gate turn-on
- drive simplicity
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
I
C
=
250mA,
V
GE
=
0
V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 150°C
V
5.0 V
200 mA
3 mA
±100 nA
1.8 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Optimized V_ce(sat) and switching
speeds for medium frequency
application
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98510C (7/00)
1-5