IXGH28N30A Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
IXGH 28N30A
IXGT 28N30A
V_CES
=
I_C25
=
V = _CE(sat)typ
t
=
fi(typ)
300 V
56 A
1.85 V
120 ns
Preliminary data
TO-247 AD (IXGH)
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
300
V
300
V
V
GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
56
A
28
A
112
A
SSOA
(RBSOA)
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
10
W
Clamped inductive load, L = 100 mH
I = 56
A
CM
@ 0.8 V_CES
P_C
T_C = 25°C
150
W
T_J
-55 ... +150
°C
T_JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
260
°C
M_d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 mA, V_GE = 0 V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V =0V
GE
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 25°C
T
J
=
125°C
300
V
2.5
5V
200 mA
1 mA
±100 nA
1.85 2.1 V
TO-268
(IXGT)
G
C
E
G
E
(TAB)
(TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOS^TM
process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97529A (9/98)
1-2