IXGH28N140B3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 1400V IGBTs w/ Diode

GenX3^TM 1400V
IGBTs w/ Diode
Avalanche Rated
IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
V_CES =
I_C110 =
V_CE(sat) ≤
1400V
28A
3.60V
TO-247 (IXGH)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1400
V
1400
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_VJ = 125°C, R_G = 5Ω
Clamped Inductive Load
T_C = 25°C
60
A
28
A
15
A
150
A
28
A
360
mJ
I_CM = 120
A
@ V_CES < V_CE
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque (IXGH & IXGK)
Mounting Force (IXGX)
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-247 & PLUS247
TO-264
6
g
10
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
Note 2, T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
50 μA
1 mA
±100 nA
3.00 3.60 V
3.05
G
C
E
Tab
PLUS247 (IXGX)
G
C
E
Tab
TO-264 (IXGK)
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Square RBSOA}
z _{Avalanche Rated}
z _{Anti-Parallel Ultra Fast Diode}
z _{High Current Handling Capability}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
© 2010 IXYS CORPORATION, All Rights Reserved
DS99736A(11/10)