IXGH25N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT For Capacitor Discharge Applications

Preliminary Technical Information
High Voltage IGBT
For Capacitor Discharge
Applications
IXGH25N250
IXGT25N250
IXGV25N250S
V_CES = 2500 V
I_C25 = 60 A
V
CE(sat)
≤
2.9 V
TO-247 (IXGH)
Symbol
V
CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
Symbol
BV_CES
V_GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
T = 25°C to 150°C
J
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, V_GE = 20 V, 1 ms
V_GE= 20 V, T_J = 125°C, R_G = 20 Ω
Clamped inductive load @ 1250V
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Maximum Ratings
2500
V
2500
V
G
CE
C (TAB)
± 20
V _{TO-268 (IXGT)}
± 30
V
60
A
25
A
200
A
G
E
C (TAB)
I_CM = 240
A
PLUS220SMD (IXGV...S)
250
W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C ^{G = Gate,}
E = Emitter,
°C
G
E
C (TAB)
C = Collector,
TAB = Collector
Mounting torque (TO-247)
1.13/10 Nm/lb-in _Features
Test Conditions
I_C = 250 μA, V_GE = 0 V
I_C = 250 μA, V_CE = V_GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 25 A, V_GE = 15 V
I_C = 75 A
TO-247
TO-268
6
g
4
g
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ. Max.
2500
V
3.0
5.0 V
T_J = 125°C
50 μA
1 mA
±100 nA
2.9 V
5.2 V
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2007 IXYS CORPORATION, All rights reserved
DS99760 (04/07)