IXGH25N160 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT

High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
IXGH 25N160
IXGT 25N160
V_CES = 1600 V
I_C25 = 75 A
V_CE(sat)= 2.5 V
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1600
V
1600
V
V_GES
V_GEM
Continuous
Transient
± 20
V
± 30
V
I_C25
T_C = 25°C
I_C110
T_C = 110°C
I_CM
T_C = 25°C, V_GE = 20 V, 1 ms
75
A
25
A
200
A
SSOA
(RBSOA)
V_GE= 15 V, T_VJ = 125°C, R_G = 20 Ω
Clamped inductive load
I_CM = 100
A
@ 0.8 V_CES
P_C
T_C = 25°C
300
W
T_J
-55 ... +150
°C
T_JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M_d
Weight
Mounting torque (TO-247)
TO-247
TO-268
1.13/10 Nm/lb-in
6
g
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 μA, V_GE = 0 V
I_C = 250 μA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±30 V
I_C = I_C110, V_GE = 15 V
I_C = 100 A, V_GE = 20 V
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
1600
3.0
T_J = 125°C
V
5.0 V
50 μA
1 mA
±100 nA
2.5 V
4.7 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
International standard packages
- JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99381(12/05)