IXGH25N100U1 Datasheet, PDF (1/6 Pages) IXYS Corporation – High speed IGBT with Diode

Preliminary data
Low V_CE(sat)
High speed IGBT
with Diode
V_CES
I_C25
V_CE(sat)
IXGH25N100U1 1000 V 50 A 3.5 V
IXGH25N100AU1 1000 V 50 A 4.0 V
TO-247 AD (IXGH)
Symbol
Test Conditions
Maximum Ratings
V_CES
V
CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P_C
T_J
T_JM
T
stg
M_d
Weight
T_C = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1000
V
1000
V
±20
V
±30
V
50
A
25
A
100
A
I_CM = 50
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
package
l 2nd generation HDMOS^TM process
l^l Low V_CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I_RM
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 4.5 mA, V_GE = 0 V
I
C
=
500
µA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
T
J
=
25°C
T_J = 125°C
1000
2.5
25N100U1
25N100AU1
V
5.5 V
500 µA
8 mA
±100 nA
3.5 V
4.0 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Saves space (two devices in one
package)
l Easy to mount (isolated mounting
screw hole)
l^l Reduces assembly time and cost
© 1996 IXYS All rights reserved
95587 (9/96)