IXGH24N60CD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT with Diode Lightspeed Series

HiPerFAST^TM IGBT
with Diode
Lightspeed Series
IXGH 24N60CD1
IXGT 24N60CD1
V_CES
I_C25
V_CE(sat)
= 600 V
= 48 A
= 2.5 V
Preliminary data
Symbol
Test Conditions
V
CES
V_CGR
V_GES
V
GEM
I_C25
I
C110
I_CM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T
C
= 110°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 22 W
Clamped inductive load, L = 100 mH
P_C
T_C = 25°C
T
J
T_JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque (M3)
Maximum Ratings
600
V
600
V
±20
V
±30
V
48
A
24
A
80
A
I_CM = 48
A
@ 0.8 V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
TO-247
TO-268
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
I_C = 750 mA, V_GE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
C110 GE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600
V
T
J
=
25°C
T_J = 150°C
2.5
5.5 V
200 mA
3 mA
±100 nA
2.1 2.5 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-247 and surface
mountable TO-268
• High frequency IGBT
• High current handling capability
• Latest generation HDMOS^TM process
• MOS Gate turn-on
- drive simplicity
• Fast recovery expitaxial Diode (FRED)
- soft recovery with low I_RM
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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