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| IXGH24N60C4D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – High-Gain IGBT w/ Diode | |||
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High-Gain IGBT
w/ Diode
High-Speed PT Trench IGBT
IXGH24N60C4D1
VCES = 600V
IC110 = 24A
V
CE(sat)
â¤
2.70V
tfi(typ) = 68ns
TO-247 AD
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
56
A
24
A
18
A
130
A
ICM = 48
A
⤠@ VCES
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE= 0V
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
4.0
6.5 V
10 μA
1.5 mA
±100 nA
2.28
1.95
2.70 V
V
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2011 IXYS CORPORATION, All Rights Reserved
DS100254B(04/11)
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