IXGH24N60C4 Datasheet, PDF (1/2 Pages) IXYS Corporation – High-Gain IGBTs

Advance Technical Information
High-Gain IGBTs
High-Speed PT Trench IGBTs
IXGA24N60C4
IXGP24N60C4
IXGH24N60C4
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
600V
24A
2.70V
68ns
TO-263 (IXGA)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
56
A
24
A
130
A
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
I_CM = 48
A
≤ @ V_CES
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
N/lb.
1.13 / 10 Nm/lb.in.
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified
BV_CES
I_C = 250μA, V_GE= 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
4.0
6.5 V
10 μA
500 μA
±100 nA
2.28
1.95
2.70 V
V
G
E
C (Tab)
TO-220 (IXGP)
GC _E
TO-247 (IXGH)
C (Tab)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100253B(12/12)