IXGH22N170 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage IGBT

High Voltage
IGBT
Advance Technical Data
IXGH 22N170
IXGT 22N170
V_CES
I_C25
V
CE(sat)
t_fi(typ)
= 1700 V
= 40 A
= 3.3 V
= 290 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1700
V
1700
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
44
A
22
A
130
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 5 Ω
Clamped inductive load
I_CM = 50
A
@ 0.8 V
CES
P_C
T_C = 25°C
210
W
T_J
-55 ... +150
°C
T
JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M
d
Weight
Mounting torque (TO-247)
1.13/10
TO-247 AD
TO-268
Nm/lb.in.7
6
g
4
g
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
z _{International standard packages}
JEDEC TO-268 and
JEDEC TO-247 AD
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Rugged NPT structure}
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
Symbol
BV_CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 • V_CES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
1700
3.0
V
5.0 V
T_J = 25°C
T
J
=
125°C
50 µA
500 µA
±100 nA
T_J = 25°C
2.0 3.0 V
z _{Capacitor discharge & pulser circuits}
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
Advantages
z _{High power density}
z _{Suitable for surface mounting}
z _{Easy to mount with 1 screw,}
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99325(02/05)