IXGH20N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFAST IGBT

HiPerFAST^TM IGBT
IXGH 20N60B
IXGT 20N60B
V_CES
I_C25
V_CE(sat)typ
t
fi(typ)
= 600 V
= 40 A
= 1.7 V
= 100 ns
Preliminary data sheet
Symbol
Test Conditions
V
CES
V_CGR
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
V_GES
V
GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 22 W
Clamped inductive load, L = 100 mH
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
TO-247
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
40
A
20
A
80
A
I_CM = 40
A
@ 0.8 V
CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
BV
CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I
C
=
250mA,
V
GE
=
0
V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 125°C
V
5.0 V
200 mA
1 mA
±100 nA
1.7 2.0 V
TO-268 (D3) (IXGT)
G
E
TO-247 AD (IXGH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
• High current handling capability
• Latest generation HDMOS^TM process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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