IXGH20N140C3H1 Datasheet, PDF (1/2 Pages) IXYS Corporation – GenX3 1400V IGBTs w/ Diode

Advance Technical Information
GenX3^TM 1400V IGBTs
w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
IXGH20N140C3H1
IXGT20N140C3H1
V_CES =
I_C100 =
V_CE(sat) ≤
t_fi(typ) =
1400V
20A
5.0V
32ns
TO-247 (IXGH)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C100
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 100°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 5Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1400
V
1400
V
±20
V
±30
V
42
A
20
A
108
A
20
A
400
mJ
I_CM = 40
A
V_CE ≤ V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C, Note 1
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C100, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
100 μA
2.0 mA
±100 nA
4.0 5.0 V
3.5
V
G
C
E
C (Tab)
TO-268 (IXGT)
G
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{High Avalanche Capability}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100251(03/10)