IXGH15N120BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Low V IGBT with Diode
CE(sat)
High Speed IGBT with Diode
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
V
DSS
1200 V
1200 V
I
C25
30 A
30 A
V
CE(sat)
3.2 V
3.8 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
V_GES
V
GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_J = 125°C, R_G = 10 W
Clamped inductive load
P_C
T_C = 25°C
T
J
T_JM
T
stg
M_d
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1200
V
1200
V
±20
V
±30
V
30
A
15
A
60
A
I_CM = 40
A
@0.8 V_CES
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
Maximum tab temperature
soldering SMD devices for 10s
260
°C
Weight
TO-247AD/TO-268
6/4
g
TO-247AD
(IXGH)
G
C
E
TO-268
(IXGT)
G
E
TAB
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages:
JEDEC TO-247AD & TO-268
• IGBT and anti-parallel FRED in one
package
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I_RM
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
I_C = 1 A, V_GE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V =V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I = I V = 15 V
C
C90, GE
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
V
5.0 V
T=
J
25°C
T_J = 125°C
500 mA
2
mA
±100 nA
15N120BD1
15N120CD1
3.2 V
3.8 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Saves space (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Reduces assembly time and cost
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98658A (7/00)
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