IXGH15N120B2D1 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFAST IGBT

Advance Technical Information
HiPerFAST^TM IGBT ^{IXGH15N120B2D1}
IXGT15N120B2D1
Optimized for 10-20 KHz hard
switching and up to 100 KHz
resonant switching
V_CES
I_C25
V_CE(sat)
t_fi(typ)
=1200 V
= 30 A
= 3.3 V
= 137 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
10
Ω
Clamped inductive load
T_C = 25°C
1200
V
1200
V
±20
V
±30
V
30
A
15
A
60
A
I = 40
A
CM
@ 0.8 V
CES
192
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
M_d
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
1.13/10 Nm/lb.in.
300
°C
260
°C
Weight
TO-247AD / TO-268 6 / 4
g
TO-247AD
(IXGH)
G
CE
TO-268
(IXGT)
G
E
TAB
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{International standard packages:}
JEDEC TO-247AD & TO-268
z _{IGBT and anti-parallel FRED in one}
package
z _{MOS Gate turn-on}
- drive simplicity
z _{Fast Recovery Expitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
CES
V_GE(th)
I
C
=
250
μA,
V
GE
=
0
V
I_C = 250 μA, V_CE = V_GE
I_CES
V_CE = V_CES
V =0V
GE
I
GES
V
CE
=
0
V,
V
GE
=
±20
V
V_CE(sat)
I_C = I_CE90, V_GE = 15
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
T_J = 25°C
T
J
=
125°C
100 μA
3.5 mA
±100 nA
T_J = 125°C
3.3
V
2.7
V
Applications
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switch-mode and resonant-mode}
power supplies
Advantages
z _{Saves space (two devices in one}
package)
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Reduces assembly time and cost}
© 2005 IXYS All rights reserved
DS99492(09/05)