IXGH120N30C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 300V IGBT

Preliminary Technical Information
GenX3^TM 300V IGBT ^IXGH120N30C3
High speed PT IGBTs for
50-150kHz switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
300V
120A
2.1V
86ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I
C110
I
CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T
J
T
JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T
C
= 110°C (chip capability)
T
C
= 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_VJ = 125°C, R_G = 2Ω
Clamped inductive load @ ≤ 300V
T_C = 25°C
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Mounting torque
Maximum Ratings
300
V
300
V
±20
V
±30
V
75
A
120
A
600
A
120
A
850
mJ
I_CM = 240
A
540
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
BV_CES
V
GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250μA, V_GE = 0V
I
C
=
250μA,
V
CE
=
V
GE
V_CE = V_CES
V_GE = 0V
V_CE = 0V, V_GE = ±20V
I_C = 120A, V_GE = 15V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
300
V
2.5
5.0
V
T_J = 125°C
50 μA
1.0 mA
±100 nA
T_J = 125°C
1.75
2.10
V
1.70
V
TO-247 AD
(IXGH)
G
C
E
(TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z _{High Frequency IGBT}
z _{Square RBSOA}
z _{High avalanche capability}
z _{Drive simplicity with MOS Gate}
Turn-On
z _{High current handling capability}
Applications
z _{PFC Circuits}
z _{PDP Systems}
z _{Switched-mode and resonant-mode}
converters and inverters
z _SMPS
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
© 2008 IXYS CORPORATION, All rights reserved
DS99850B(01/08)