IXGH120N30B3 Datasheet, PDF (1/5 Pages) IXYS Corporation – GenX3 300V IGBT

GenX3^TM 300V IGBT
IXGH120N30B3
Medium speed low Vsat PT
IGBTs for 10-50 kHz switching
V_CES =
I_C110 =
V_CE(sat) ≤
300V
120A
1.7V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_J = 125°C, R_G = 1Ω
Clamped inductive load @V_CE≤ 300V
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
300
V
300
V
±20
V
±30
V
75
A
120
A
480
A
I_CM = 240
A
540
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
V_GE(th)
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 120A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
300
V
3.0
5.0 V
10 μA
500 μA
±100 nA
1.42 1.70 V
1.47
V
TO-247 (IXGH)
G
CE
TAB
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z _{Optimized for low switching losses}
z _{Square RBSOA}
z _{International standard package}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2008 IXYS CORPORATION, All rights reserved
DS99797A(07/08)