IXGH10N60A Datasheet, PDF (1/2 Pages) IXYS Corporation – Low VCE(sat) IGBT, High speed IGBT

Preliminary data
Low V_CE(sat) IGBT
High speed IGBT
V_CES
IXGA/IXGP/IXGH10N60 600 V
IXGA/IXGP/IXGH10N60A 600 V
I_C25
20 A
20 A
V_CE(sat)
2.5 V
3.0 V
TO-220AB(IXGP)
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
V_GES
V
GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 150 Ω
Clamped inductive load, L = 300 µH
P
T = 25°C
C
C
T_J
T_JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
V
600
V
±20
V
±30
V
20
A
10
A
40
A
I_CM = 20
A
@ 0.8 V_CES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
M
d
Weight
Mounting torque, TO-247 AD
TO-263 AA
TO-247 AD
1.13/10 Nm/lb.in.
2
g
6
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
600
I_C = 250 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
10N60
10N60A
V
5V
200 µA
1 mA
±100 nA
2.5 V
3.0 V
G _CE
TO-263 AA (IXGA)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l _{International standard packages}
JEDEC TO-263 AA surface
mountable and JEDEC TO-247 AD
l _{2nd generation HDMOS}TM _process
Low V
CE(sat)
- for low on-state conduction losses
l _{High current handling capability}
l _{MOS Gate turn-on}
- drive simplicity
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings, TO-263 AA}
l _{Facilitates automated assembly}
l _{Reduces assembly time and cost}
l _{Easy to mount with 1 screw, TO-247}
(isolated mounting screw hole)
l _{High power density}
© 1996 IXYS All rights reserved
91510G (9/96 )