IXGH10N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT

High Voltage
IGBT
IXGH10N170
IXGT10N170
V_CES =
I_C90 =
V_CE(sat) ≤
1700V
10A
4.0V
TO-247 (IXGH)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 16Ω
Clamped inductive load
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = I_C90, V_GE = 15V, Note 1
T_J = 125°C
Maximum Ratings
1700
V
1700
V
± 20
V
± 30
V
20
A
10
A
70
A
I_CM = 20
A
@ 0.8 • V_CES
110
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6
g
4
g
Characteristic Values
Min. Typ. Max.
1700
V
3.0
5.0 V
50 μA
500 μA
±100 nA
2.7
4.0 V
3.4
G
C
E
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{International standard packages}
JEDEC TO-268 and
JEDEC TO-247 AD
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Rugged NPT structure}
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
z _{Capacitor discharge & pulser circuits}
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
Advantages
z _{High power density}
z _{Suitable for surface mounting}
z _{Easy to mount with 1 screw,}
(isolated mounting screw hole)
© 2008 IXYS CORPORATION, All rights reserved
DS98992A(10/08)