IXGF30N400 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT For Capacitor Discharge Applications

High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
IXGF30N400
V_CES = 4000V
I_C25 = 30A
V_CE(sat) ≤ 3.1V
Symbol
V_CES
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, V_GE = 20V, 1ms
V_GE= 20V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
T_C = 25°C
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting Force
50/60Hz, 1 minute
Maximum Ratings
4000
V
± 20
V
± 30
V
30
A
15
A
360
A
I_CM = 300
A
V_CE ≤ 0.8 • V_CES
160
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120 / 4.5..27
Nm/lb.in.
4000
V~
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES, V_GE = 0V
Note 2, T_J = 100°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
I_C = 90A
Characteristic Values
Min. Typ. Max.
4000
V
3.0
5.0 V
50 μA
3 mA
±200 nA
3.1 V
5.2 V
ISOPLUS i4-Pak^TM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
High Power Density
Easy to Mount
Applications
Capacitor Discharge
Pulser Circuits
© 2009 IXYS CORPORATION, All Rights Reserved
DS99978C(11/09)